Infineon IPD80R1K4P7: A High-Performance Power MOSFET for Efficient Switching Applications

The demand for energy-efficient power management solutions continues to grow across industries such as automotive systems, industrial motor drives, and renewable energy infrastructure. At the heart of these systems lies the power MOSFET—a critical component responsible for switching performance and overall efficiency. The Infineon IPD80R1K4P7 stands out as a premier example of advanced semiconductor engineering, designed to meet the rigorous requirements of modern high-efficiency applications.

Built using Infineon’s proprietary OptiMOS™ technology, the IPD80R1K4P7 is a N-channel power MOSFET that delivers exceptional switching performance and minimized conduction losses. With a drain-source voltage (VDS) of 80 V and a continuous drain current (ID) of 80 A, this device is well-suited for high-current DC-DC converters, synchronous rectification, and motor control circuits. Its low on-state resistance (RDS(on)) of just 1.4 mΩ maximizes power efficiency by reducing heat generation and energy waste during operation.

One of the key strengths of the IPD80R1K4P7 is its optimized gate charge (Qg) and figure of merit (FOM), which contribute to faster switching transitions and lower driving losses. This makes it particularly advantageous in high-frequency applications where switching speed directly impacts system performance. Additionally, the MOSFET features enhanced avalanche ruggedness and a body diode with high softness, improving reliability in inductive load environments and ensuring stable operation under extreme conditions.

The device is offered in a D2PAK (TO-263) package, providing excellent thermal performance and mechanical durability. This package type allows for efficient heat dissipation, enabling the MOSFET to operate at high power levels without compromising longevity. These attributes make the IPD80R1K4P7 a preferred choice for designers seeking to enhance power density and thermal management in space-constrained applications.

In summary, the Infineon IPD80R1K4P7 exemplifies the innovation in power semiconductor technology, offering a blend of high current capability, ultra-low RDS(on), and robust switching characteristics. It empowers engineers to develop more efficient, compact, and reliable power systems for a sustainable technological future.

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Keywords:

Power MOSFET,

Low RDS(on),

High Efficiency,

Switching Performance,

OptiMOS Technology