Infineon IRF9540NLPBF P-Channel Power MOSFET Datasheet and Application Overview

The Infineon IRF9540NLPBF is a benchmark P-Channel power MOSFET engineered with advanced process technology to deliver high efficiency and reliability in a wide array of power management applications. As a member of Infineon’s renowned power MOSFET portfolio, this component is characterized by its low on-state resistance, high current handling capability, and robust performance in switching circuits.

A key highlight from the datasheet is the device’s low typical gate charge and low static drain-to-source on-resistance (RDS(on)), which significantly reduce conduction losses and improve overall system efficiency. With a continuous drain current rating of -19A and a drain-to-source voltage (VDS) of -100V, the IRF9540NLPBF is particularly suited for medium to high-power DC switching. The component is housed in a TO-220AB package, offering excellent thermal performance and ease of mounting for both prototype and production use.

Typical applications include load switching systems, power inverters, motor control circuits, and DC-DC converters. In battery-powered devices, the P-Channel configuration is especially advantageous for high-side switching, simplifying gate driving requirements by allowing the gate to be pulled to ground for turn-on. Moreover, the device’s avalanche ruggedness and strong linear mode operation enhance durability in inductive load environments.

Designers should pay close attention to gate-source voltage (VGS) limits, ensuring it remains within the ±20V range. Proper heatsinking is recommended when operating near maximum ratings to maintain junction temperature within safe limits. Utilizing a gate driver IC can further optimize switching performance, minimizing transition time and losses.

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ICGOOODFIND: The Infineon IRF9540NLPBF is a highly efficient P-Channel MOSFET ideal for high-side switching applications, offering an excellent balance of low RDS(on), high current capacity, and thermal performance, making it a top choice for power management designs.

Keywords:

P-Channel MOSFET

High-Side Switching

Low RDS(on)

Power Management

TO-220 Package