Infineon IPP030N10N5: High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge, the Infineon IPP030N10N5 stands out as a benchmark in power MOSFET technology. As a member of the esteemed OptiMOS™ 5 family, this 100 V N-channel MOSFET is engineered to deliver exceptional performance in a wide array of power conversion applications, from server and telecom supplies to motor drives and solar inverters.

The cornerstone of the IPP030N10N5's superiority is its extremely low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 3.0 mΩ at 10 V, it minimizes conduction losses, allowing for more power to be delivered to the load with less energy wasted as heat. This is complemented by an outstanding gate charge performance, which ensures swift switching transitions. Faster switching translates directly to lower switching losses, especially crucial in high-frequency circuits where efficiency can rapidly degrade. This dual achievement of low R DS(on) and low Q G is the key to achieving peak efficiency across a wide load range.

Beyond raw electrical performance, the IPP030N10N5 is designed for robustness and reliability. It features a high body diode robustness (dv/dt capability), enhancing its resilience in demanding applications like hard-switching and half-bridge topologies where parasitic turn-on is a concern. The component is also housed in an advanced, space-saving D2PAK (TO-263) package, which offers an excellent balance between thermal performance and board space utilization. This makes it an ideal choice for designers looking to make their systems both more powerful and more compact.

Furthermore, the OptiMOS™ 5 technology ensures superior switching characteristics that contribute to reduced electromagnetic interference (EMI), simplifying the task of meeting stringent EMI compliance standards. This allows engineers to optimize their designs with fewer external filtering components, reducing both system complexity and cost.

ICGOOODFIND: The Infineon IPP030N10N5 exemplifies the innovation in power semiconductor technology, providing a potent combination of ultra-low losses, high switching speed, and proven reliability. It is a critical enabler for designers aiming to push the boundaries of efficiency and power density in next-generation power conversion systems.

Keywords: Power Efficiency, Low R DS(on), OptiMOS™ 5, Fast Switching, Power Density.