Infineon IRLZ34NSTRLPBF N-Channel HEXFET Power MOSFET Datasheet and Application Overview
The Infineon IRLZ34NSTRLPBF is a highly efficient N-Channel HEXFET Power MOSFET designed using advanced silicon gate technology, which combines high-speed switching performance with low on-state resistance. This device is part of Infineon’s robust power MOSFET portfolio, aimed at improving energy efficiency and thermal performance in a wide range of power management applications.
With a drain-source voltage (VDS) rating of 55V and continuous drain current (ID) of 30A at 25°C, the IRLZ34N is well-suited for medium-power switching applications. Its standout feature is the exceptionally low typical on-resistance (RDS(on)) of just 35 mΩ at 10V gate drive, which minimizes conduction losses and improves overall system efficiency. The device is also characterized by its fast switching speed, making it ideal for high-frequency circuits such as switch-mode power supplies (SMPS), DC-DC converters, and motor controllers.
The MOSFET is housed in a TO-262 package, which offers a compact footprint while providing effective thermal performance. This package type is commonly used in applications requiring good power dissipation. Additionally, the device is 100% avalanche tested, ensuring reliability under inductive load conditions, and it features low gate charge, which simplifies drive circuit design and reduces switching losses.
Key sections of the datasheet include:
- Absolute Maximum Ratings: Defining operational limits for parameters such as voltage, current, and temperature.
- Electrical Characteristics: Covering static and dynamic performance metrics including gate threshold voltage, input/output capacitance, and switching times.
- Typical Performance Characteristics: Graphical data illustrating behavior under various conditions.
A typical application for the IRLZ34N is in synchronous rectification circuits within power supplies, where its low RDS(on) helps reduce energy loss. It is also commonly used in motor drive control systems, battery management circuits, and load switching modules. When designing with this MOSFET, attention should be paid to gate driving voltage, layout for thermal management, and protection against voltage transients.
ICGOOODFIND:
The Infineon IRLZ34NSTRLPBF offers an optimal blend of low conduction loss, high current capability, and robust switching performance, making it a versatile choice for power electronics designers seeking efficiency and reliability.
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Keywords: HEXFET, Low On-Resistance, Power MOSFET, Switching Applications, Synchronous Rectification
