Infineon BC847PNH6327: General-Purpose NPN Bipolar Junction Transistor (BJT)

Release date:2025-10-31 Number of clicks:159

Infineon BC847PNH6327: General-Purpose NPN Bipolar Junction Transistor (BJT)

The Infineon BC847PNH6327 is a highly versatile and widely used NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Housed in a compact SOT-363 surface-mount package, this device is part of the renowned BC847 series, which is a staple in the electronics industry due to its reliability and performance.

Engineered for efficiency, the BC847PNH6327 features a low saturation voltage, which ensures minimal power loss when the transistor is in its fully on (saturated) state. This characteristic is particularly crucial in switching applications, such as in digital logic interfaces or load driving, where energy efficiency is paramount. Simultaneously, it offers high current gain, typically ranging up to 600, making it exceptionally effective for amplifying small signal currents in audio pre-amplifiers, sensor interfaces, and other analog circuits.

A key advantage of this component is its dual-emitter configuration. This design allows two independent transistors in a single package, providing board space savings and improved layout symmetry in differential amplifier pairs or digital logic gates. This makes it an excellent choice for high-density circuit designs where minimizing the footprint is critical.

The transistor is characterized by its high reliability and performance, with a collector current (IC) rating of 100 mA and a collector-emitter voltage (VCEO) of 45 V. These specifications make it suitable for a broad range of low-power applications within consumer electronics, industrial control systems, and automotive modules. Furthermore, it is halogen-free and compliant with RoHS directives, adhering to modern environmental standards.

ICGOOODFIND: The Infineon BC847PNH6327 is an exceptional general-purpose NPN BJT that excels in both amplification and switching duties. Its combination of low saturation voltage, high current gain, and space-saving dual-emitter design makes it a superior and efficient choice for modern electronic designs, from consumer gadgets to industrial systems.

Keywords: NPN Transistor, General-Purpose BJT, Low Saturation Voltage, High Current Gain, SOT-363 Package.

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