Infineon IPD50N04S410ATMA1 40V 50A OptiMOS 5 Power MOSFET: Datasheet and Application Overview
The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. Infineon Technologies, a leader in this field, addresses these demands with its OptiMOS™ 5 power MOSFET family. The IPD50N04S410ATMA1 stands as a prime example, offering a compelling blend of performance characteristics for a wide range of demanding applications. This article provides an overview of its key datasheet parameters and typical use cases.
Unpacking the Datasheet: Key Performance Metrics
The part number itself reveals core attributes: 50A current capability, 40V voltage rating. Delving into the datasheet, the superior performance of this N-channel MOSFET is rooted in its advanced trench technology.
The most striking feature is its exceptionally low typical on-state resistance (R DS(on)) of just 1.4 mΩ at 10 Vgs. This ultra-low resistance is the primary contributor to minimizing conduction losses. When high current flows through the device, the power dissipated as heat (I²R) is drastically reduced, leading to cooler operation and higher overall system efficiency.
Furthermore, the device boasts outstanding switching performance. The low gate charge (Qg total typ. 110 nC) and figure of merit (FOM, R DS(on) Qg) ensure fast switching transitions. This reduces switching losses, which is critical for high-frequency operation in switch-mode power supplies (SMPS). The low effective output capacitance (Coss eff) also contributes to lower energy loss during each switching cycle.
The 40V drain-source voltage (VDS) rating makes it exceptionally robust for 12V and 24V bus systems, providing a comfortable margin for voltage spikes and transients, thereby enhancing system reliability. The device is also characterized by its high peak current handling capability, making it resilient against sudden load changes.
Application Overview: Where It Excels
The combination of low R DS(on), fast switching speed, and a 40V rating makes the IPD50N04S410ATMA1 extremely versatile. Its primary applications include:
Automotive Systems: It is an ideal candidate for a multitude of 12V automotive applications such as electric power steering (EPS), braking systems, fuel pumps, and advanced driver-assistance systems (ADAS). Its robustness meets the stringent quality and reliability requirements of the automotive industry.
DC-DC Conversion: In both synchronous and non-synchronous buck and boost converters, this MOSFET is used in the primary switching stage. Its high efficiency is crucial for maximizing battery life in portable devices and improving the performance of voltage regulator modules (VRMs) in servers and telecom infrastructure.
Motor Control and Driving: The MOSFET’s high current rating and ruggedness make it perfect for H-bridge and half-bridge circuits controlling brushed DC motors. This applies to industrial automation, robotics, and high-current fan controllers.
Load Switching Systems: It serves as a highly efficient solid-state switch for high-side or low-side switching of heavy loads, replacing mechanical relays in advanced power distribution units.
ICGOOODFIND Summary
The Infineon IPD50N04S410ATMA1 OptiMOS 5 Power MOSFET is a high-performance semiconductor device engineered for efficiency and power density. Its defining characteristics are an ultra-low 1.4 mΩ R DS(on) and excellent switching metrics, which collectively minimize both conduction and switching losses. With a 40V/50A rating, it provides a robust and reliable solution primarily targeted at demanding automotive applications and high-efficiency DC-DC power conversion systems, enabling designers to create smaller, cooler, and more efficient power electronics.
Keywords:
1. Low RDS(on)
2. High Efficiency
3. Automotive Applications
4. Power MOSFET
5. DC-DC Conversion
